0.18 µm CMOS Standard Cell | ON Semiconductor

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    ONC18: 0.18 µm CMOS标准单元

    概览
    产品概述
    ONC18标准单元系列结合了高性能、低功率内核库及存储器带丰富的I/O功能和先进的片外存储器接口。ONC18系列使用高性能0.18 µm CMOS工艺,为低成本、中到大批量应用提供小裸片尺寸。

    特性
    • 工艺技术:
      • 0.18 µm ONC18高性能(HP)工艺
      • 高达6层金属及再分布层(RDL)
    • 高达1,000万逻辑门及7 Mb RAM
    • 极佳的功率及性能:
      • 0级(zero stage)流水线18×18乘法器125℃时承受4 ns
      • 高速 - 266 MHz本地时钟性能
      • 1.8 V或1.5 V内核工作
      • 1.5 V、1.8 V、2.5 V、3.3 V I/O单元
      • 3.3 V/5 V容限I/O单元
      • 提供高阈值电压(HVt)逻辑及存储器,用于要求低泄漏的设计
    • 密度、速度、性能及价格的最优组合:
      • 高密度 - 125,000门 / mm2
      • 低功率:46 nW/MHz/门 (FO=1; VDD=1.8 V )
    • 结温度范围为-55°C至150°C
    • 宽范围的软件及硬件IP:
      • 10/100以太网MAC,I²C
      • R8051,ARM内核及外设
      • DDR及DDR2字节通道加控制器
    • 支持宽范围的存储器:
      • 高达16 K x 64的同步单及双端口
      • 专用BIST端口
      • 存储器编译器优化了速度、密度及低功率
      • 采用2048 x 32单端口SRAM配置时存储器性能达 360 MHz
      • 提供可编程ROM
    • FPGA转换专用存储器特性:
      • 输出寄存器模式,移位寄存器模式,FIFO模式
      • Xilinx先读后写
      • Xilinx无变化模式
      • Altera MRAM尺寸
    • 丰富的I/O单元选择:
      • LVTTL,LVCMOS,PCI 33/66,SSTL I/II,HSTL,LVPECL,LVDS,DCI
      • 数控阻抗为25 Ω或50 Ω输出阻抗
    • PLL时序产生器:
    • 广泛的封装能力:
      • 0.65 mm至1.27 mm间距BGA
      • CSP,QFP,CQFP,TQFP,PLCC,LCC,JLCC
      • 差分对匹配
      • 走线(trace)的阻抗受控
      • 带闪存的堆叠封装
      • 可按要求提供高温老化测试(Burn-in)能力
    • 丰富的可测试性设计(DFT)方法:
      • 扫描链插入及重排序
      • 存储器模块内建测试(BIST)
      • 自动测试项目生成(ATPG)
      • JTAG边界扫描插入
    • ESD保护能力符合或超越JEDEC标准:
      • 2,000 V HBM
      • 500 V CDM
      • 250 V MM
    • 闩锁>100 mA @ 85°C
    • 提供多层光罩(MLR)
    应用

    安森美半导体在位于美国国内的晶圆厂制造ONC18晶圆。此外,安森美半导体还提供全套在岸(on-shore)流程,包括设计、产生掩膜、硅、封装及测试,全都符合国际武器贸易规章(ITAR)及不可向国外发布(NOFORN)流程,配合政府及军事项目。因此,ONC18极适合军事及商业航空、军需品和雷达系统。其它应用包括工业应用、商业应用及军事通信,如无线基础设施及其它终端应用。

    小裸片尺寸和低器件成本适合需要众多板载存储器和逻辑的设计。ONC18工艺的高性能能力使其非常适合于众多应用,其中包括那些需要10/100以太网MAC、CAN 2.0和I2C的应用。

    ONC18提供的低功率内核库和存储器使其符合功率敏感型ASIC要求。结合安森美半导体的在岸能力,ONC18是多种严格环境下电池供电及安全应用的极佳方案。

    中等规模ASIC设计

    ONC18为门数量高达1000万及存储器容量多达7 Mb的中等规模ASIC应用提供高性价比的解决方案。安森美半导体的RTL签核(sign-off)及网表交递(hand-off)流程结合支持丰富系列的I/O标准,帮助客户快速及无缝接取ONC18设计。

    现有产品的第二货源
    安森美半导体的ASIC至ASIC转换能力使ONC18成为现有大、中甚至小批量产品的高性价比替代货源。

    FPGA原型设计
    基于安森美半导体丰富的FPGA转换经验,采用FPGA构建原型的ASIC设计,或者是那些特别采用FPGA及其它器件构建原型或分割(partitioned)的ASIC设计,能够集成到单个ONC18器件之中。

    FPGA转换
    ONC18产品路线图将扩展至完全支持1.8 V及1.5 V FPGA器件,其中包括完整的I/O及存储器特性兼容性和DLL/PLL等同性。

    增加定制模块
    安森美半导体专长于为定制ASCI集成数字及模拟功能。模块功能包括模数转换器(ADC)及数模转换器(DAC)、运算放大器及比较器、电磁干扰(EMI)/射频干扰(RFI)滤波器、交流-直流(AC-DC)及直流-直流(DC-DC)控制器及稳压器、驱动器、热管理、电压及电流管理,以及数字电位计。

    设计流程

    众多领先的第三方软件平台支持安森美半导体ASIC:

    • Cadence®
    • Synopsys®
    • Mentor Graphics™

    安森美半导体设计流程集成了领先的第三方设计工具及我们的专有工具,为带RTL签核的中等规模ASIC设计提供灵活的设计接口,并为ASIC到ASIC转换提供ASIC网表,以及为FPGA到ASIC转换提供FPGA设计。安森美半导体的软件支持方法确保能紧凑及良好地配合设计到制造流程。安森美半导体的专职资深工程专家能够在设计流程的任何阶段提供协助。

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